供应等离子刻蚀机台2Phanto…

供应等离子刻蚀机台2PhantomIII
产品简介
详细介绍
  • 参考报价:电议 产地:广东深圳 品牌:自定义品牌 型号:Phantom III 更新时间:2022/11/16

Phantom III Reactive Ion Etch (RIE) System

The Phantom III RIE is designed to supply research and failure analysis laboratories with state-of-the-art plasma etch capability using single wafers, dies or parts using fluorine and oxygen based chemistries. The system has a compact, modular design built on a space-saving platform.

"Frankly, the Phantom has been a GREAT machine since I have been a user. For this machine that has been at least 10 years. This Phantom was purchased originally by Philips where I used to work. The Phantom has followed me to Sipex and now Exar. I can't imagine living without it. It has been one of the best made and reliable plasma etchers I have used in my over 20-year career." - Don Breedlove, Failure Analysis Engineer, Exar Corporation.

Link to Phantom RIE at Duke University Lab

Applications

MEMS, Solid State Lighting, Failure Analysis, Research & Development, Pilot Line.
 


Fluorine Etch Processes
(SF6, CF4, CHF3, O2)

•Carbon
•Quartz
•Epoxy
•Si
•GaAs/AlGaAs
•SiO2
•InSb
•Si3N4
•Ir
•SiC
•Mo
•Ta
•Nb
•TaN
•OxyNitride
•TiW
•Polyimide
•TiN
Pr (e.g: SiLK or SU8)
•W
 

Tool Features
Reactor - The cathode and anode are each machined out of single blocks of aluminum. After critical inspection they are hard anodized for protection from process chemistries. The bottom electrode is available in either 200mm or 300mm sizes and can process single wafers, dies or parts (2" - 300mm). Process gases are introduced into the chamber either by an annular ring or a showerhead manifold.

Automatic Matching Network - The uniquely designed network is built in as an integral part of the bottom electrode assembly to ensure accurate tuning, low transmission loss and virtually no RF radiation outside the network itself. The network uses a phase magnitude sensor and amplifiers to provide instantaneous feedback for quick precise tuning.

RF Generator - The Phantom III comes with a 600 watt, 13.56 MHz, solid state RF generator. (The Phantom LT comes with a 300 watt RF generator).

Touch Screen Operator Interface - A color flat panel display with touch screen interface provides the operator with full process information at all times. The software interface guides the operator through each sequence in a logical fashion and gives fingertip control of all process parameters.

PC Process Controller - The PC process controller provides simple and reliable system control. The graphical software package creates programs in block diagram form. Process recipes are stored on the hard drive or can be stored on USB flash drives allowing each operator to maintain individual recipes.

AC Distribution Module - The AC distribution module automatically distributes predefined power quantities to the various internal components. When the Emergency Power Off button is tripped, the RF power is shut off and all valves involved with gas delivery are automatically closed and the machine automatically powers down to a safe standby mode. This system includes separate power controls for the main AC and peripherals.

Automatic Pressure Control - Every Trion system includes a butterfly pressure control valve operated directly by the process controller. This provides independent pressure control separate from all other processing parameters.

Gas Delivery System - State-of-the-art technology is utilized to ensure the utmost integrity and purity. Each Phantom III reaction chamber accommodates up to eight mass flow controllers and all plumbing utilizes surface mount, C-seal technology or orbital welded VCR fittings. (The Phantom LT comes with two mass flow controllers).

Safety- The system meets all SEMI_S2-93 safety requirements. The system is CE compliant with Machinery Directive 98/37/EC, the Low Voltage Directive 73/23/EEC and the Electromagnetic Compatibility Directive 89/336/EEC for CE Marking requirements. A third party safety review is available upon request.

Facilities - Facility schematics can be provided upon request.

Tool Advanced Options

Pumping Systems - Each reaction chamber requires it’s own pump. Trion can supply these as needed according to your requirements. There are mechanical, dry and turbo pump options available. You may choose to provide your own pump(s) or they can be purchased directly from Trion. All pump options provided by Trion are proven systems chosen to best meet your specific process needs.

Temperature Control -An external chiller or heater/chiller recirculator may be recommended. By controlling the reactor temperature (bottom electrode), process reproducibility is greatly enhanced and the etch byproducts are more readily volatilized.

Endpoint Detection Systems - Trion offers both optical and laser endpoint detection options which allows the user to measure film thickness changes in-situ during the etch process. These systems are integrated into and controlled by Trion software.

Inductively Coupled Plasma - Trion’s carefully engineered ICP is a proven option for applications requiring a downstream, high-density plasma source. It dramatically reduces radiation damage and contamination from RIE sputtering and greatly increases selectivity to other films. It allows for higher plasma densities as power is transferred into the bulk plasma via the magnetic field resultant from inductive coupling. This enables processing at lower pressure, which has a number of significant benefits. It allows for tight anisotropy in high aspect ratio structures and reduces microloading effect. Trion’s ICP source will result in improved etch rates, profile control, uniformity and selectivity with a dramatic reduction in RIE radiation damage. The Phantom III ICP comes with a 600 or 1250 watt, 13.56 MHz power supply and a built-in automatic matching network. (The Phantom LT ICP comes with a 600 watt power supply.)

Electrostatic Chuck - Maintaining cooler substrate temperatures during etching is often critical. Trion’s electrostatic chuck holds the wafer securely to the chuck by electrostatic forces while flowing a small quantity of helium onto the backside of the wafer, providing significant cooling.

 

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