Configuration |  |
Magnetron Sputter Chamber | D shape, 304 stainless steel chamber with viewport |
Vacuum Pumping | Turbo pump (Cryopump) and dry rough pump |
Vacuum Valve | Pneumatic operation high vacuum and isolation gate valves Chamber Vent Valve, Rough and Foreline angle valve, and gas valve |
Sputtering Sources | Four 4” circle magnetron sputtering sources Each source with Pneumatic shutter The power supply can be DC, pulse DC or RF power supply |
Sample Stage | Substrate linear motion, rotating, and the sample heating or water cooling, Up to 6” substrate with Pneumatic substrate shutter |
Vacuum Gauging | Wide range vacuum gauge and Pirani rough gauge |
Pressure Control | Four Mass flow controller Capacitance manometer for sputter process pressure control |
Cooled Water Interlock | There are cooled water flow sensors of interlock to protect sputter sources work properly |
Load Lock | Option O2 reactive, RF plasma cleaning, single or multi substrate loading |
Specification
The Base Vacuum Pressure in Sputter Chamber | better than 5E-8 Torr |
Sample Loading Capacity | Max. 6 inch flat substrate |
The Max. Temperature of the Sample Heater | 1000C degree |
The film uniformity | better than +/-3% over a rotating 4 inch Silicon wafer |
General Sputtering Pressure | 1-5 mTorr |
Features:
Good Film Uniformity and repeatability
Safety interlock for critical components
Advantage:
Vacuum Pressure ≤ 5.0×10-8Torr
Reach 1E-6 Torr <15 mins, reach 5E-7Torr <30mins
Vacuum pressure is 7.5E-2Torr after 100hours from system stop
Working pressure stable: 0.25%
Plasma stable at less 1mTorr Batch film uniformity: +/-5%
Substrate heating to 1000 degrees
Excellent film adhesion
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