The DE400 Electron Beam Evaporator is assembled with one e-beam source,
the substrate is mounting on the horizontal axial on the side of chamber for the substrate polar to change the deposition angle. DE400电子束蒸发仪配置一个电子束蒸发源，基片架装于腔体侧面水平转动的轴上，基片可以改变镀膜角度 Configuration 主要配置 Evaporation Chamber 蒸发腔体 | 304 stainless steel chamber with viewport 蒸发腔体为304不锈钢，并有观察窗 | Vacuum Pumping 真空泵 | Cryo-pump or Turbo pump and dry rough pump 蒸发室配备分子泵和无油机械泵 | Vacuum Valve 真空阀门 | Pneumatic UHV gate valves 气动控制超高真空插板阀 | Evaporation Source 蒸发源 | Multi pocket e-beam source 多坩埚电子束蒸发源 | Substrate Chamber 样品室 | 304 stainless steel chamber with viewport 蒸发腔体为304不锈钢，并有观察窗 | Sample Stage 样品台 | Side mount polar Substrate 侧面安装的转角样品台 | Film Control 膜厚检测 | Crystal Film thickness Monitor and Control 晶振膜厚监控 | Vacuum Gauging 真空测量 | Wide range vacuum gauge and rough gauge 宽量程真空计用于测量真空和粗抽计 |
Specification 主要技术指标 The Base Vacuum Pressure 极限真空度 | better than 9E-9 Torr 优于9E-9托 | Sample Loading Capacity 装样能力 | One Max. 4 inch flat substrate 一个最大4英寸的平板基片 | Rate Resolution 蒸发速率分辨率 | 0.05 Angstroms/sec | Thickness Resolution = 0.02 Angstroms 膜厚分辨率 | 0.02 Angstroms |
Features 特点 Unique Design of Substrate Chamber and Sources chamber isolated by UHV gate valve 独特的结构设计，基片腔体和蒸发源腔体通过UHV门阀隔开 All Metal Seal, True UHV System 系统采用全金属密封，真正的超高真空系统 Stand along system frameworks and electric rack 独立的系统机架和电器柜 E-beam source Water Interlock 电子束蒸发源冷水安全互锁
Optional Substrate Cooling 样品台可选水冷
Typical Application 典型应用 For R&D Thin Film Deposition 用于薄膜沉积研发 Ideal tools for LIFT-OFF process 用于LIFT-OFF工艺的理想平台 Ideal tools for GLAD process 用于GLAD工艺的理想平台 Evaporate metal, Semiconductor or Insulation Materials (material depends) 可蒸发金属，半导体或介质材料（视具体材料而定） Evaporate Magnetic Materials 可蒸发磁性材料 LOAD LOCK 预真空进样室（可选） 产品技术优势： DE400 E-BEAM EVAPORATOR 电子束蒸发仪的极限真空度可达≤ 5.0×10-9Torr 抽至1E-6Torr的时间约为15分钟，抽至5E-7Torr的时间约为30分钟 关机100小时后的真空度可保持在7.5E-3Torr 可蒸发镍、钴、铁磁性材料 工如通入反应气体，则工作气压稳定性优于0.25%，观察不到压力漂移 | 
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